Effect of proton irradiation on the properties of high-voltage integrated 4H-SiC Schottky diodes at operating temperatures
نویسندگان
چکیده
The effect of proton irradiation (proton energy 15 MeV) on the parameters high-voltage 4H-SiC integrated Schottky diodes (JBS) was studied for first time in operating temperature range Ti (23 and 175 o C). blocking voltage under study, U b , 600 1700 V. For devices with U_b = V, fluence 5·10 13 -1·10 14 cm -2 ; U_b=1700 3·10 -6·10 . An increase leads to a noticeable decrease current-voltage characteristics diodes. annealing irradiated is studied. Keywords: Silicon carbide, diodes, irradiation, characteristics, annealing.
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ژورنال
عنوان ژورنال: Fizika i tehnika poluprovodnikov
سال: 2023
ISSN: ['0015-3222', '1726-7315']
DOI: https://doi.org/10.21883/sc.2023.01.55620.4475